Schottky junction diode devices in CMOS with multiple wells
US8759937B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2006 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Nov 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A Schottky junction diode device having improved performance and a multiple well structure is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped differently, such as to a second conductivity type opposite that of the first conductivity type. A second well is disposed within the first well. A region of metal-containing material is disposed in the second well to form a Schottky junction at an interface between the region of metal-containing material and the second well. In one embodiment, a second well contact is disposed in a portion of the second well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.