Bi-directional back-to-back stacked SCR for high-voltage pin ESD protection, methods of manufacture and design structures
US8760831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2013 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Feb 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Bi-directional back-to-back stacked SCRs for high-voltage pin ESD protection, methods of manufacture and design structures are provided. The device includes a symmetrical bi-directional back-to-back stacked silicon controlled rectifier (SCR). An anode of a first of the back-to-back stacked SCR is connected to an input. An anode of a second of the back-to-back stacked SCR is connected to ground. Cathodes of the first and second of the back-to-back stacked SCR are connected together. Each of the symmetrical bi-directional back-to-back SCRs include a pair of diodes directing current towards the cathodes which, upon application of a voltage, become reverse biased effectively and deactivating elements from one of the symmetrical bi-directional back-to-back SCRs while the diodes of another of the symmetrical bi-directional back-to-back SCRs direct current in the same direction as the reverse biased diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.