Methods of characterizing semiconductor light-emitting devices based on product wafer characteristics
US8765493B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Nov 20, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods of characterizing semiconductor light-emitting devices (LEDs) based on product wafer characteristics are disclosed. The methods include measuring at least one product wafer characteristic, such curvature or device layer stress. The method also includes establishing a relationship between the at least one characteristic and the emission wavelengths of the LED dies formed from the product wafer. The relationship allows for predicting the emission wavelength of LED structures formed in the device layer of similarly formed product wafers. This in turn can be used to characterize the product wafers and in particular the LED structures formed thereon, and to perform process control in high-volume LED manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.