Manufacturable high-k DRAM MIM capacitor structure
US8765570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jun 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first dielectric material is formed above a first electrode material. The first electrode material is rigid and has good mechanical strength and serves as a robust frame for the capacitor stack. The first dielectric material is sufficiently thin (<2 nm) or highly doped so that it remains amorphous after subsequent anneal treatments. A second dielectric material is formed above the first dielectric material. The second dielectric material is sufficiently thick (>3 nm) or lightly doped or non-doped so that it crystallizes after subsequent anneal treatments. A second electrode material is formed adjacent to the second dielectric material. The second electrode material has a high work function and a crystal structure that serves to promote the formation of the high k-value crystal structure of the second dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.