Patent · US Active

Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

US8766336B2 · kind B2 · utility

10Cited by

1References

84Claims

0Family size

Assignee

ACORN TECHNOLOGIES, INC. · US

Inventors

Daniel E. Grupp · Palo Alto, US
Daniel J. Connelly · San Francisco, US

Key dates

Filing date	Nov 28, 2012
Grant date	Jul 1, 2014
Priority date	—
Expiry date	Nov 28, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/62
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An electrical device in which an interface layer comprising arsenic is disposed between and in contact with a conductor and a semiconductor. In some cases, the interface layer may be a monolayer of arsenic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.