Patent · US Active

Semiconductor modules and methods of formation thereof

US8766430B2 · kind B2 · utility

2Cited by

9References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ralf Otremba · Kaufbeuren, DE
Davide Chiola · Chino, US
Erich Griebl · Dorfen, DE
Fabio Brucchi · Villach, AT

Key dates

Filing date	Jun 14, 2012
Grant date	Jul 1, 2014
Priority date	—
Expiry date	Nov 6, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2201/10522
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In accordance with an embodiment of the present invention, a semiconductor module includes a first semiconductor device having a first plurality of leads including a first gate/base lead, a first drain/collector lead, and a first source/emitter lead. The module further includes a second semiconductor device and a circuit board. The second semiconductor device has a second plurality of leads including a second gate/base lead, a second drain/collector lead, and a second source/emitter lead. The circuit board has a plurality of mounting holes, wherein each of the first plurality of leads and the second plurality of leads is mounted into a respective one of the plurality of mounting holes. At the plurality of mounting holes, a first distance from the first gate/base lead to the second gate/base lead is different from a second distance from the first source/emitter lead to the second source/emitter lead.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.