Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells
US8772076B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Sep 3, 2010 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Oct 5, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present invention provides for new ohmic contact materials and diffusion barriers for Group IBIIIAVIA based solar cell structures, which eliminate two way diffusion while preserving the efficient ohmic contacts between the substrate and the absorber layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.