Phase change memory devices and methods of manufacturing the same
US8772121B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Aug 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
Abstract
A method of manufacturing a phase change memory device includes forming a lower electrode layer pattern and an insulating interlayer covering the lower electrode layer pattern, forming a first opening in the insulating interlayer to expose the lower electrode layer pattern, forming an oxide layer pattern on the sidewall of the first opening and a lower electrode under the oxide layer pattern by partially removing the oxide layer and the lower electrode layer pattern, forming an insulation layer filling a remaining portion of the first opening, removing the oxide layer pattern by a wet etching process to form a second opening, and forming a phase change material pattern on the lower electrode such that the phase change material pattern fills the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.