Production method for a unipolar semiconductor component and semiconductor device

US8772140B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Rudolf Elpelt · Erlangen, DE
• Peter Friedrichs · Koblenzer Straße, DE

Key dates

• Filing date: Jul 12, 2010
• Grant date: Jul 8, 2014
• Expiry date: Jul 12, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A unipolar semiconductor component having a drift layer is produced by forming the drift layer with a continuously decreasing concentration of a charge carrier doping along the growth direction of the drift layer by way of epitaxial precipitation of the material of the drift layer, which comprises at least one wide band gap material. By using silicon carbide for the drift layer formed by the epitaxial precipitation, a subsequent change of the continuously decreasing concentration of the charge carrier doping due to a diffusion of the dopant atoms in downstream processes is suppressed. The production method can be used in particular to implement a unipolar semiconductor component comprising a drift layer, which component has an advantageous ratio of a comparatively high reverse bias voltage with relatively low forward losses, in a simple and/or cost-effective manner. The unipolar semiconductor component can be an active or passive semiconductor component.