Patent · US Active

FinFET structure and method to adjust threshold voltage in a FinFET structure

US8772149B2 · kind B2 · utility

4Cited by

6References

8Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Eduard A. Cartier · New York, US
Brian J. Greene · Wappingers Falls, US
Dechao Guo · Niskayuna, US
Gan Wang · Fishkill, US
Yanfeng Wang · Qingdao, CN
Keith Kwong Hon Wong · Wappingers Falls, US

Key dates

Filing date	Oct 19, 2011
Grant date	Jul 8, 2014
Priority date	—
Expiry date	Jul 20, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/215
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.