Semiconductor device including inner interconnection structure able to conduct signals or voltages in the semiconductor chip with vertical connection vias and horizontal buried conductive lines
US8772937B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jun 17, 2011 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | May 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor chip and an inner interconnection structure. The semiconductor chip includes a front surface that exposes first connection terminals and a rear surface that is opposite to the front surface and exposes second connection terminals separated from the first connection terminals. The inner interconnection structure includes horizontal buried conductive lines and vertical connection lines disposed to pierce the semiconductor chip to connect the first connection terminals and the second connection terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.