Patent · US Active

Selection of polishing parameters to generate removal profile

US8774958B2 · kind B2 · utility

8Cited by
4References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 29, 2011
Grant dateJul 8, 2014
Priority date
Expiry dateAug 14, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG05B2219/45232
  • WIPO fieldControl
  • WIPO sectorInstruments

Abstract

Values are selected for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head with a plurality of zones to apply independently controllable pressures on a substrate. Data is stored relating variation in removal profile on a front surface of the substrate to variation in the controllable parameters, the data including removal at a plurality of positions on the front surface of the substrate, there being a greater number of positions than chambers. A value is determined for each parameter of the plurality of controllable parameters to minimize a difference between a target removal profile and an expected removal profile calculated from the data relating variation in removal profile on a front surface of the substrate to variation in the parameters. The value for each parameter of the plurality of controllable parameters is stored.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.