Patent · US Active

Semiconductor package and methods of formation thereof

US8778733B2 · kind B2 · utility

7Cited by

2References

35Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Edward Fuergut · Nuremberg, DE
Joachim Mahler · Regensburg, DE
Khalil Hosseini · Weihmichl, DE

Key dates

Filing date	Mar 19, 2012
Grant date	Jul 15, 2014
Priority date	—
Expiry date	Apr 17, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19105
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one embodiment, a method of forming a semiconductor package includes placing a first die and a second die over a carrier. At least one of the first and the second dies are covered with an encapsulation material to form an encapsulant having a top surface and an opposite bottom surface. The encapsulant is thinned from the bottom surface to expose a first surface of the first die without exposing the second die. The exposed first surface of the first die is selectively etched to expose a second surface of the first die. A back side conductive layer is formed so as to contact the first surface. The second die is separated from the back side conductive layer by a first portion of the encapsulant.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.