Film forming method
US8778815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2013 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | May 24, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a polyimide film on a surface of a substrate by dehydration condensation of a first monomer including a bifunctional acid anhydride and a second monomer including a bifunctional amine is disclosed. The method includes loading the substrate into a processing chamber, heating the substrate at a temperature at which a polyimide film is formed, and performing a cycle a predetermined number of times. The cycle comprises supplying a first processing gas containing the first monomer to the substrate, supplying a second processing gas containing the second monomer to the substrate. The method further includes supplying a replacement gas in the processing chamber between supplying the first processing gas and supplying the second processing gas thereby replacing atmosphere in the processing chamber by the replacement gas, and evacuating the first and/or the second processing gas out of the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.