In situ vapor phase surface activation of SiO2

US8778816B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Tatsuya Sato · Cupertino, US
• David Thompson · San Jose, US
• Jeffrey W. Anthis · San Jose, US
• Vladimir Zubkov · Mountain View, US
• Steven Verhaverbeke · San Francisco, US
• Roman Gouk · San Jose, US
• Maitreyee Mahajani · Saratoga, US
• Patricia M. Liu · Saratoga, US
• Malcolm J. Bevan · Dallas, US

Key dates

• Filing date: Jul 27, 2011
• Grant date: Jul 15, 2014
• Expiry date: Sep 12, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02164
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.