Patent · US Active

Semiconductor device with capacitive coupling structure

US8779564B1 · kind B1 · utility

9Cited by

2References

26Claims

0Family size

Assignee

Intel IP Corporation · US

Inventors

Mikael Bergholz Knudsen · Gistrup, DK
Thorsten Meyer · Regensburg, DE
Saravana Maruthamuthu · Munich, DE
Andreas Wolter · Regensburg, DE
Georg Seidemann · Landshut, DE
Pablo Herrero · Munich, DE
Pauli Jaervinen · Wallerfing, DE

Key dates

Filing date	Mar 14, 2013
Grant date	Jul 15, 2014
Priority date	—
Expiry date	Mar 14, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device may include: a chip; a chip packaging structure at least partially surrounding the chip and having a receiving region configured to receive a first capacitive coupling structure; a first capacitive coupling structure disposed in the receiving region; and a second capacitive coupling structure disposed over the first capacitive coupling structure and capacitively coupled to the first capacitive coupling structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.