Method and apparatuses for integrated circuit substrate manufacture
US8779598B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2011 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Dec 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein provide a method of manufacturing integrated circuit (IC) devices. The method includes coupling a first surface of a first intermediate substrate to a first surface of a second intermediate substrate, forming a first plurality of patterned metal layers on a second surface of the first intermediate substrate to form a first substrate and a second plurality of patterned metal layers on a second surface of the second intermediate substrate to form a second substrate, and separating the first and second substrates. Each of the first substrate and the second substrate is configured to facilitate electrical interconnection between a respective IC die and a respective printed circuit board (PCB).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.