Capacitively-coupled electrostatic (CCE) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof
US8780522B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2009 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | May 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.