Patent · US Active

Method of optical proximity correction

US8782572B1 · kind B1 · utility

3Cited by

3References

8Claims

0Family size

Assignee

UNITED MICROELECTRONICS CORP. · TW

Inventors

Sheng-Yuan Huang · New Taipei, TW
Chia-Wei Huang · New Taipei, TW
Ming-Jui Chen · Hsinchu, TW

Key dates

Filing date	Mar 13, 2013
Grant date	Jul 15, 2014
Priority date	—
Expiry date	Mar 13, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/70
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method of optical proximity correction (OPC) includes the following steps. First, a layout pattern is provided to a computer system. Subsequently, the layout pattern is classified into a first sub-layout pattern and a second sub-layout pattern. Then, an OPC calculation based on a first OPC model is performed on the first sub-layout pattern so as to form a corrected first sub-layout pattern and an OPC calculation based on a second OPC model is performed on the second sub-layout pattern so as to form a corrected second sub-layout pattern. Afterward, the corrected first sub-layout pattern and the corrected second sub-layout pattern are output from the computer system into a photomask.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.