Method for repairing damage of dielectric film by cyclic processes
US8785215B2 · kind B2 · utility
504Cited by
7References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2013 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | May 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for repairing process-related damage of a dielectric film includes: (i) adsorbing a first gas containing silicon on a surface of the damaged dielectric film without depositing a film in the absence of reactive species, (ii) adsorbing a second gas containing silicon on a surface of the dielectric film, followed by applying reactive species to the surface of the dielectric film, to form a monolayer film thereon, and (iii) repeating step (ii). The duration of exposing the surface to the first gas in step (i) is longer than the duration of exposing the surface to the second gas in step (ii).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.