Non-volatile FINFET memory device and manufacturing method thereof
US8785275B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2014 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Feb 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating an electronic device and electronic devices therefrom are provided. A method includes forming one or more masking layers on a semiconducting surface of a substrate and forming a plurality of dielectric isolation features and a plurality of fin-type projections using the masking layer. The method also includes processing the masking layers and the plurality of fin-type projections to provide an inverted T-shaped cross-section for the plurality of fin-type projections that includes a distal extension portion and a proximal base portion. The method further includes forming a plurality of bottom gate layers on the distal extension portion and forming a plurality of control gate layers on the plurality of dielectric isolation features and the plurality of bottom gate layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.