FinFETs and fin isolation structures

US8785284B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Marc A. Bergendahl · Troy, US
• David V. Horak · South Burlington, US
• Charles W. Koburger, III · Delmar, US
• Shom Ponoth · Irvine, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Feb 20, 2013
• Grant date: Jul 22, 2014
• Expiry date: Feb 20, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

FinFETs and fin isolation structures and methods of manufacturing the same are disclosed. The method includes patterning a bulk substrate to form a plurality of fin structures of a first dimension and of a second dimension. The method includes forming oxide material in spaces between the plurality of fin structures of the first dimension and the second dimension. The method includes forming a capping material over sidewalls of selected ones of the fin structures of the first dimension and the second dimension. The method includes recessing the oxide material to expose the bulk substrate on sidewalls below the capping material. The method includes performing an oxidation process to form silicon on insulation fin structures and bulk fin structures with gating. The method further includes forming a gate structure over the SOI fin structures and the bulk fin structures.