Adaptation of the lattice parameter of a layer of strained material
US8785293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2010 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Jul 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A1, of nominal lattice parameter An and of thermal expansion coefficient CTE3, a low-viscosity layer and an intermediate substrate of thermal expansion coefficient CTE1; b) a heat treatment is applied so as to relax the seed layer of strained material; and c) the seed layer is transferred onto a support substrate of thermal expansion coefficient CTE5, the intermediate substrate and the support substrate being chosen so that A1<An and CTE1≦CTE3 and CTE5>CTE1 or A1>An and CTE1≧CTE3 and CTE5<CTE1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.