Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
US8785889B2 · kind B2 · utility
4Cited by
19References
54Claims
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/13
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.