Semiconductor device including ultra low-K (ULK) metallization stacks with reduced chip-package interaction

US8786088B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Torsten Huisinga · Dresden, DE
• Jens Heinrich · Radeberg, DE
• Kai Frohberg · Meißen, DE
• Frank Feustel · Dresden, DE

Key dates

• Filing date: Dec 13, 2010
• Grant date: Jul 22, 2014
• Expiry date: Dec 23, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In complex semiconductor devices, sophisticated ULK materials may be used in metal line layers in combination with a via layer of enhanced mechanical stability by increasing the amount of dielectric material of superior mechanical strength. Due to the superior mechanical stability of the via layers, reflow processes for directly connecting the semiconductor die and a package substrate may be performed on the basis of a lead-free material system without unduly increasing yield losses.