Schottky diode having current leakage protection structure and current leakage protecting method of the same
US8786362B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2013 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Jun 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Schottky diode having a current leakage protection structure includes a Schottky diode unit, a first isolation portion and a second isolation portion. The Schottky diode unit is defined in a substrate and includes a metalized anode, an active region having dopants of first conductive type, a cathode and at least one isolation structure. The first isolation portion having dopants of second conductive type is formed between substrate and active region, and the first isolation portion includes a first well disposed beneath active region, and a first guard ring surrounding active region and connecting to the first well. The second isolation portion having dopants of first conductive type is formed between substrate and the first isolation portion, and the second isolation portion includes a second well disposed beneath the first well, and a second guard ring surrounding the first guard ring and connecting to the second well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.