Systems, and devices, and methods for programming a resistive memory cell
US8787095B2 · kind B2 · utility
2Cited by
12References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 28, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Sep 9, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that includes a quenching period. The quenching period includes an initial portion and a subsequent portion, with the subsequent portion different than the initial portion. During the initial portion, the amplitude of the programming pulse may be reduced to a first target amplitude level, and during the subsequent portion, the amplitude of the programming pulse may be further reduced to a second target amplitude level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.