Light emitting element and method of making same
US8791466B2 · kind B2 · utility
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6References
4Claims
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Key dates
| Filing date | May 24, 2013 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | May 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.