GaN containing optical devices and method with ESD stability
US8791499B1 · kind B1 · utility
12Cited by
86References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2010 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Dec 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved laser light emitting diode. The device has a gallium nitride substrate structure, which includes a surface region. The device also has an epitaxial layer overlying the surface region and a p-n junction formed within a portion of the epitaxial layer. In a preferred embodiment, the device also has one or more plane or line defects spatially configured in a manner to be free from intersecting the p-n junction, the one or more plane or line defects being at least 1×106 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.