Patent · US Active

Multiple gate transistor having homogenously silicided fin end portions

US8791509B2 · kind B2 · utility

17Cited by

8References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Sven Beyer · Dresden, DE
Patrick Press · Dresden, DE
Rainer Giedigkeit · Dresden, DE
Jan Hoentschel · Dresden, DE

Key dates

Filing date	Nov 17, 2009
Grant date	Jul 29, 2014
Priority date	—
Expiry date	Mar 1, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6219

Abstract

In a multiple gate transistor, the plurality of Fins of the drain or source of the transistor are electrically connected to each other by means of a common contact element, wherein enhanced uniformity of the corresponding contact regions may be accomplished by an enhanced silicidation process sequence. For this purpose, the Fins may be embedded into a dielectric material in which an appropriate contact opening may be formed to expose end faces of the Fins, which may then act as silicidation surface areas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.