Laser cooling of modified SOI wafer
US8794010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2010 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Dec 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.