Inventor · Shrewsbury, MA, US

Andrew Clark

68Patents
7h-index
30Co-inventors
72Inventor score

Filing activity: Feb 5, 1991 → May 2, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6411638B1 Coupled cavity anti-guided vertical-cavity surface-emitting laser Electricity 54 Expired
US5235927A Autopilot system Performing Operations; Transporting 37 Expired
US8796121B1 Stress mitigating amorphous SiO2 interlayer Electricity 14 Active
US5313397A Autopilot system for a vessel Physics 13 Expired
US8846504B1 GaN on Si(100) substrate using epi-twist Electricity 11 Active
US5057765A Current regulation circuit for inductive loads Electricity 11 Expired
US8501635B1 Modification of REO by subsequent III-N EPI process Electricity 8 Active
US8633569B1 AlN inter-layers in III-N material grown on REO/silicon substrate Electricity 7 Active
US8878188B2 REO gate dielectric for III-N device on Si substrate Electricity 7 Active
US8748900B1 Re-silicide gate electrode for III-N device on Si substrate Electricity 7 Active
US8636844B1 Oxygen engineered single-crystal REO template Electricity 6 Active
US8823055B2 REO/ALO/A1N template for III-N material growth on silicon Electricity 5 Active
US8394194B1 Single crystal reo buffer on amorphous SiOx Electricity 5 Active
US9360565B2 Radiation detector and fabrication process Physics 5 Active
US10605987B2 Re-based integrated photonic and electronic layered structures Electricity 4 Active
US6678300B2 Coupled cavity anti-guided vertical-cavity surface-emitting laser Electricity 4 Expired
US9674602B2 Acoustic element for a speaker Electricity 3 Active
US9596530B2 Configurable speaker Emerging Cross-Sectional Technologies 3 Active
US9142406B1 III-N material grown on ErAlN buffer on Si substrate Electricity 3 Active
US8680507B1 A1N inter-layers in III-N material grown on DBR/silicon substrate Electricity 3 Active
US8794010B2 Laser cooling of modified SOI wafer Electricity 2 Active
US8049100B2 Multijunction rare earth solar cell Emerging Cross-Sectional Technologies 2 Active
US10566944B2 Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride Electricity 2 Active
US8872308B2 AlN cap grown on GaN/REO/silicon substrate structure Electricity 2 Active
US10075143B2 Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.