Pattern forming method and method for producing device
US8795953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2011 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Feb 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a pattern forming method, a first L & S pattern is formed on a wafer; a first protective layer, a second L & S pattern having a perpendicular periodic direction to that of the first L & S pattern, and a photoresist layer are formed to cover the first L & S pattern; a third pattern having first apertures is formed in the photoresist layer to be overlapped with a part of the second L & S pattern; second apertures are formed in the first protective layer via the first apertures; and a part of the first L & S pattern is removed via the second apertures. Accordingly, a pattern including a non-periodic portion finer than a resolution limit of an exposure apparatus is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.