Methods of integrated shielding into MTJ device for MRAM
US8796046B2 · kind B2 · utility
13Cited by
10References
22Claims
0Family size
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Key dates
| Filing date | Sep 25, 2013 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Sep 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.