Monitoring and measurement of thin film layers
US8796048B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2012 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Dec 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides methods and structures for measurement, control, and monitoring the thickness of thin film layers formed as part of a semiconductor manufacturing process. The methods and structures presented provide the capability to measure and monitor the thickness of the thin film using trench line structures. In certain embodiments, the thin film thickness measurement system can be integrated with thin film growth and control software, providing automated process control (APC) or statistical process control (SPC) capability by measuring and monitoring the thin film thickness during manufacturing. Methods for measuring the thickness of thin films can be important to the fabrication of integrated circuits because the thickness and uniformity of the thin film can determine electrical characteristics of the transistors being fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.