Inventor · Sunnyvale, CA, US

Lance Scudder

18Patents
5h-index
25Co-inventors
58Inventor score

Filing activity: May 11, 2012 → Apr 26, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US8569156B1 Reducing or eliminating pre-amorphization in transistor manufacture Electricity 19 Active
US9112057B1 Semiconductor devices with dopant migration suppression and method of fabrication thereof Electricity 10 Active
US8796048B1 Monitoring and measurement of thin film layers Electricity 6 Active
US8614128B1 CMOS structures and processes based on selective thinning Electricity 6 Active
US8877619B1 Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom Electricity 6 Active
US9299698B2 Semiconductor structure with multiple transistors having various threshold voltages Electricity 5 Active
US8937005B2 Reducing or eliminating pre-amorphization in transistor manufacture Electricity 4 Active
US9041126B2 Deeply depleted MOS transistors having a screening layer and methods thereof Electricity 4 Active
US8637955B1 Semiconductor structure with reduced junction leakage and method of fabrication thereof Electricity 3 Active
US8999861B1 Semiconductor structure with substitutional boron and method for fabrication thereof Electricity 2 Active
US8778786B1 Method for substrate preservation during transistor fabrication Electricity 1 Active
US9391076B1 CMOS structures and processes based on selective thinning Electricity 1 Active
US10014387B2 Semiconductor structure with multiple transistors having various threshold voltages Electricity 0 Active
US10217838B2 Semiconductor structure with multiple transistors having various threshold voltages Electricity 0 Active
US9514940B2 Reducing or eliminating pre-amorphization in transistor manufacture Electricity 0 Active
US9105711B2 Semiconductor structure with reduced junction leakage and method of fabrication thereof Electricity 0 Active
US9812550B2 Semiconductor structure with multiple transistors having various threshold voltages Electricity 0 Active
US9793172B2 Reducing or eliminating pre-amorphization in transistor manufacture Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.