Tellurium compounds useful for deposition of tellurium containing materials
US8796068B2 · kind B2 · utility
12Cited by
27References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2013 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Jun 6, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/305
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.