Method and system for a semiconductor device package with a die-to-die first bond
US8796072B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2012 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Nov 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die. An underfill material may be applied between the semiconductor die and the interposer die, and a mold material may be applied to encapsulate the semiconductor die. The interposer die may be thinned to expose through-silicon-vias (TSVs). The bonding of the semiconductor die may comprise adhering the semiconductor die to an adhesive layer, and bonding the semiconductor die to the interposer die. The semiconductor die may comprise micro-bumps for coupling to the interposer die, wherein the bonding comprises: positioning the micro-bumps in respective wells in a layer disposed on the interposer die; and bonding the micro-bumps to the interposer die. The semiconductor die may be bonded to the interposer die utilizing a mass reflow process or a thermal compression process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.