Device structure for a RRAM and method
US8796102B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2012 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Sep 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A method of forming a resistive device includes forming a first wiring layer overlying a first dielectric on top of a substrate, forming a junction material, patterning the first wiring layer and junction material to expose a portion of the first dielectric, forming a second dielectric over the patterned first wiring layer, forming an opening in the second dielectric to expose a portion of the junction material, forming a resistive switching material over the portion of the junction material in the opening, the resistive switching material having an intrinsic semiconductor characteristic, forming a conductive material over the resistive switching material, etching the conductive material and the resistive switching material to expose respective sidewalls of the resistive switching material and the conductive material, and the second dielectric, and forming a second wiring layer over the conductive material in contact with the respective sidewalls and the second dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.