Semiconductor device and method of forming RDL along sloped side surface of semiconductor die for z-direction interconnect
US8796137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2010 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Dec 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a first semiconductor die with a sloped side surface. The first semiconductor die is mounted to a temporary carrier. An RDL extends from a back surface of the first semiconductor die along the sloped side surface of the first semiconductor die to the carrier. An encapsulant is deposited over the carrier and a portion of the RDL along the sloped side surface. The back surface of the first semiconductor die and a portion of the RDL is devoid of the encapsulant. The temporary carrier is removed. An interconnect structure is formed over the encapsulant and exposed active surface of the first semiconductor die. The RDL is electrically connected to the interconnect structure. A second semiconductor die is mounted over the back surface of the first semiconductor die. The second semiconductor die has bumps electrically connected to the RDL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.