Bilayer trench first hardmask structure and process for reduced defectivity
US8796150B2 · kind B2 · utility
4Cited by
18References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2011 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Feb 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.