Conformal oxide dry etch
US8801952B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2013 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Jun 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32724
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction of (1) a hydrogen-containing precursor and then (2) a fluorine-containing precursor into a substrate processing region. The temperature of the substrate is low during each of the two steps in order to allow the reaction to proceed and form solid residue by-product. A second disclosed method reverses the order of steps (1) and (2) but still forms solid residue by-product. The solid residue by-product is removed by raising the temperature in a subsequent sublimation step regardless of the order of the two steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.