Method for manufacturing high density non-volatile magnetic memory
US8802451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2012 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Oct 3, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods of fabricating MTJ arrays using two orthogonal line patterning steps are described. Embodiments are described that use a self-aligned double patterning method for one or both orthogonal line patterning steps to achieve dense arrays of MTJs with feature dimensions one half of the minimum photo lithography feature size (F). In one set of embodiments, the materials and thicknesses of the stack of layers that provide the masking function are selected so that after the initial set of mask pads have been patterned, a sequence of etching steps progressively transfers the mask pad shape through the multiple mask layer and down through all of the MTJ cell layers to the form the complete MTJ pillars. In another set of embodiments, the MTJ/BE stack is patterned into parallel lines before the top electrode layer is deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.