Work function adjustment with the implant of lanthanides
US8802519B2 · kind B2 · utility
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Key dates
| Filing date | Apr 2, 2013 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Apr 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and fabrication methods are provided, in which fully silicided gates are provided. A lanthanide series metal is implanted into the gate electrode layer prior to silicidation and diffuses into the gate dielectric during an activation anneal. This process and resultant structure provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.