Methods to adjust threshold voltage in semiconductor devices

US8802522B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Michael G. Ward · Wells, US
• Igor Peidous · Fishkill, US
• Sunny Chiang · Loudonville, US
• Yen B. Ta · Cupertino, US
• Andrew Darlak · Niskayuna, US
• Peter I. Porshnev · San Jose, US
• Swaminathan Srinivasan · Pleasanton, US

Key dates

• Filing date: Jul 25, 2011
• Grant date: Aug 12, 2014
• Expiry date: Sep 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.