Methods of forming charge storage structures including etching diffused regions to form recesses
US8802525B2 · kind B2 · utility
2Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Sep 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.