Method for forming the gate insulator of a MOS transistor
US8802575B2 · kind B2 · utility
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Key dates
| Filing date | Apr 10, 2012 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Jun 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming the gate insulator of a MOS transistor, including the steps of: a) forming a thin silicon oxide layer at the surface of a semiconductor substrate; b) incorporating nitrogen atoms into the silicon oxide layer by plasma nitridation at a temperature lower than 200° C., to transform this layer into a silicon oxynitride layer; and c) coating the silicon oxynitride layer with a layer of a material of high dielectric constant, wherein steps b) and c) follow each other with no intermediate anneal step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.