Diode and resistive memory device structures
US8803120B2 · kind B2 · utility
1Cited by
6References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 11, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Sep 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
Abstract
In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode may make up a layer of the resistive memory device which is in series with that diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.