Lightly doped silicon carbide wafer and use thereof in high power devices

US8803160B2 · kind B2 · utility

Assignees

• Siced Electronics Development GmbH & Co. KG · DE
• Norstel AB · SE

Inventors

• Alexandre Ellison · Säter, SE
• Björn Magnusson · Säter, SE
• Asko Vehanen · Espoo, FI
• Dietrich Stephani · Bubenreuth, DE
• Heinz Mitlehner · Uttenreuth, DE
• Peter Friedrichs · Koblenzer Straße, DE

Key dates

• Filing date: Dec 29, 2011
• Grant date: Aug 12, 2014
• Expiry date: Mar 20, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/931
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.