Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof

US8803235B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• An-Hung Lin · Taipei, TW
• Hong-Ze Lin · Hsinchu, TW
• Bo-Jui Huang · Hsinchu, TW
• Wei-Shan Liao · Yuanchang, TW
• Ting-Zhou Yan
• Kun-Yi Chou · New Taipei, TW
• Chun-Wei Chen · Hsinchu, TW

Key dates

• Filing date: Oct 3, 2013
• Grant date: Aug 12, 2014
• Expiry date: Oct 3, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A lateral-diffused metal oxide semiconductor device (LDMOS) includes a substrate, a first deep well, at least a field oxide layer, a gate, a second deep well, a first dopant region, a drain and a common source. The substrate has the first deep well which is of a first conductive type. The gate is disposed on the substrate and covers a portion of the field oxide layer. The second deep well having a second conductive type is disposed in the substrate and next to the first deep well. The first dopant region having a second conductive type is disposed in the second deep well. The doping concentration of the first dopant region is higher than the doping concentration of the second deep well.